BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010 Product data sheet
1. Product profile
1...
BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for standard and logic level gate drives Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 11 Min Typ 11.9 Max Unit 30 47 60 14 V A W mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive ID = 47 A; Vsup ≤ 30 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 13; see Figure 14 30 mJ
Dynamic characteristics QGD 4.77 nC
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