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BUK553-60A Datasheet

Part Number BUK553-60A
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK553-60A DatasheetBUK553-60A Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK553-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (D.

  BUK553-60A   BUK553-60A






Part Number BUK553-60B
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK553-60A DatasheetBUK553-60B Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK553-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (D.

  BUK553-60A   BUK553-60A







PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK553-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 21 75 175 0.085 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 21 15 84 75 175 175 MAX. 60 60 15 20 -60B 20 14 80 UNIT V V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 M.


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