Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-vol...
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-
voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat hFEsat tfi PARAMETER Collector-emitter
voltage peak value Collector-base
voltage (open emitter) Collector-emitter
voltage (open base) Emitter-base
voltage (open collector) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 18 0.14 21 140 MAX. 1200 1200 525 6 10 32 1.0 25 203 UNIT V V V V A A W V ns
Ths ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 2 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO VEBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter
voltage Collector to emitter
voltage (open base) Collector to base
voltage (open emitter) Emitter-base
voltage (open collector) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperatu...