Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ101A
GENERAL DESCRIPTION
High-vo...
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ101A
GENERAL DESCRIPTION
High-
voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter
voltage peak value Collector-Base
voltage (open emitter) Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Fall time CONDITIONS VBE = 0 V TYP. 40 MAX. 700 700 400 0.5 1 42 1.0 100 UNIT V V V A A W V ns
Tmb ≤ 25 ˚C IC = 0.2 A;IB = 20 mA Ic=0.2A,IB1=20mA
PINNING - TO220AB
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter
voltage Collector to emitter
voltage (open base) Collector to base
voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 0.5 1 0.2 0.3 42 150 150 UNIT V V V A A A A W ˚C ˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth ...