Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emit.
Silicon Diffused Power Transistor
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.23 14 50 MAX. 700 700 400 1.0 2.0 6 1.0 20 70 UNIT V V V A A W V ns
Tsp ≤ 25 ˚C IC = 0.75 A;IB = 150 mA IC = 0.75 A;VCE = 5 V IC = 1.0 A,IBON=200 mA
PINNING - SOT223
PIN 1 2 3 4 base collector emitter collector (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
c b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 1.0 2.0 0.5 1.0 6 150 150 UNIT V V V A A A .