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BUH517

Savantic

Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH517 www.datasheet4u.com DESCRIPTION ·...


Savantic

BUH517

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Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH517 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors. ·Switching power supplies for TV’s and monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 700 10 8 15 5 8 60 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1700V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V 6 MIN 700 10 TYP. www.datasheet4u.com BUH517 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE MAX UNIT V V 1.5 1.3 1.0 2.0 100 ...




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