®
BUH515D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLT...
®
BUH515D
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s
s
STMicroelectronics PREFERRED SALESTYPE HIGH
VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE
3 2 1
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
R Typ. = 12 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature
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Value 1500 700 5 8 15 5 8 50 -65 to 150 150
Uni t V V V A A A A W
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C C 1/7
November 1999
BUH515D
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation
Voltage Base-Emitt er Saturation
Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD St...