BUF642

www.DataSheet4U.com BUF642 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 9 6 10 3 6 70 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Junction ambient Test Conditions Symbol RthJC RthJA Value 1.78 85 Unit K/W K/W Document Number 86511 Rev. 2, 20–Jan–99 www.vishay.de FaxBack +1-408-970-5600 1 (8) BUF642 Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Test Conditions VCES = 900 V VCES = 900 V; Tcase = 150° C VCEO = 400 V Collector-emitter IC = 500 mA; L = 125 mH; breakdown voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter IC = 1 A; IB = 0.25 A saturation voltage IC = 3 A; IB = 1 A Base-emitter...