BUF620

BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses www.DataSheet4U.com D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 4 6 2 3 40 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 3.12 Unit K/W Document Number 86507 Rev. 2, 20–Jan–99 www.vishay.de FaxBack +1-408-970-5600 1 (9) BUF620 Vishay Telefunken Electrical Characteristics Tcase = 25°C, unless otherwise specified Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C Collector-emitter breakdown IC = 300 mA; L = 125 mH; voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter saturation voltage IC = 0.6 A; IB = 0.15 A g IC = 2 A; IB = 0.7 A www.DataSheet4U.com Base-emitter saturation voltage...