BUD600

BUD600 Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies 2 94 8965 1 1 94 8964 3 2 3 BUD600 1 Base 2 Collector 3 Emitter BUD600 –SMD 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 250 300 600 11 2 3 0.75 1 12 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 60° C TELEFUNKEN Semiconductors Rev. B2, 18-Jul-97 1 (9) Free Datasheet http://www.datasheet4u.com/ BUD600 Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 7.5 Unit K/W Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g DC forward current transfer ratio Test Conditions VCES = 600 V VCES = 600 V; ...