®
BU941Z/BU941ZP BU941ZPFI
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
s s s
s
VERY RUGGED BIPOLAR TECHNO...
®
BU941Z/BU941ZP BU941ZPFI
HIGH
VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
s s s
s
VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES
TO-3
APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS
1 2
3 2
3 2
TO-218
1
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
for TO-3 Emitter: pin 2 Base: pin1 Collector: tab
ABSOLUTE MAXIMUM RATINGS
Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BU941Z Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature
o
Value BU941Z P 350 5 15 30 1 5 180 -65 to 200 200 155 -65 to 175 175 65 -65 to 175 175 BUB941ZPFI
Uni t V V A A A A W
o o
C C
January 2000
1/8
BU941Z/BU941ZP/BU941ZPFI
THERMAL DATA
TO-3 R t hj-ca se Thermal Resistance Junct ion-case Max 0.97 TO-218 0.97 ISOW AT T218 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEO I EBO V CL ∗ V CE(sat )∗ Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping
Voltage Collector-Emitter Saturation
Voltage Base-Emitt er Saturation
Voltage DC Current Gain Test Cond ition s V CE = 300 V V CE = 300 V V EB = 5 V I C = 100 mA IC = 8 A I C = 10 A I C = 12 A IC = 8 A I C = 10 A I C = 12 A IC = 5 A IB = 100 mA IB = 250 mA IB = 300 mA IB = 100 mA IB = 250 mA IB = 300 mA V C...