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BU941Z

ST Microelectronics

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNO...


ST Microelectronics

BU941Z

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® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 2 3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BU941Z Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value BU941Z P 350 5 15 30 1 5 180 -65 to 200 200 155 -65 to 175 175 65 -65 to 175 175 BUB941ZPFI Uni t V V A A A A W o o C C January 2000 1/8 BU941Z/BU941ZP/BU941ZPFI THERMAL DATA TO-3 R t hj-ca se Thermal Resistance Junct ion-case Max 0.97 TO-218 0.97 ISOW AT T218 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I EBO V CL ∗ V CE(sat )∗ Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 300 V V CE = 300 V V EB = 5 V I C = 100 mA IC = 8 A I C = 10 A I C = 12 A IC = 8 A I C = 10 A I C = 12 A IC = 5 A IB = 100 mA IB = 250 mA IB = 300 mA IB = 100 mA IB = 250 mA IB = 300 mA V C...




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