SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU921
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DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU921
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High current;high
voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 5 10 15 5 120 175 -65~175 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.25 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Collector-emitter saturation
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward
voltage CONDITIONS IC=0.1A; IB=0 IC=5A;IB=50mA IC=7 A;IB=140mA IC=5A;IB=50mA IC=7 A;IB=140mA VCE=450V;VBE=0 TC=150 VCE=400V;IB=0 VEB=5V; IC=0 IC=2A; VEB=2V IF=7A 500 MIN 400 TYP.
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BU92...