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BU808DFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
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s
s s s
s s
STMicroelectronics PREFERRED SALESTYPE N...
®
BU808DFI
HIGH
VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
s
s
s s s
s s
STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH
VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184
3 2 1
APPLICATIONS s COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj June 2000 Parameter Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1400 700 5 8 10 3 6 52 -65 to 150 150 Uni t V V V A A A A W
o o
C C 1/7
BU808DFI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.4
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation
Voltage Base-Emitt er ...