BU806

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BU806 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2.08 ℃/W 70 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BU806 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=B 50mA ICES Collector Cutoff Current VCE= RatedVCBO; VBE= 0 ICEV Collector Cutoff Current IEBO Emitter Cutoff Current VCE= RatedVCEV; VBE(off)= 6V VEB= 6V; IC= 0 VECF C-E Diode Forward Voltage IF= 4A Switching T...