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BU522B

INCHANGE
Part Number BU522B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 23, 2020
Detailed Description isc Silicon Darlington NPN Power Transistor BU522B DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(...
Datasheet PDF File BU522B PDF File

BU522B
BU522B

Overview
isc Silicon Darlington NPN Power Transistor BU522B DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 425 V VCER Collector-Emitter Voltage 450 V VCBO Collector-Base Voltage 475 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERI...


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