BU508DFI

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W BU508DFI isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508DFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃ VEB= 5.0V; IC= 0 1.3 V 1.0 2.0 mA 300 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz 7 MHz VF Di...