BU505D

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. 2 BU505; BU505D 2 APPLICATIONS Horizontal deflection circuits of colour television receivers. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 1 MBB008 1 3 MBB077 3 1 2 3 a. BU505. b. BU505D. Fig.1 Simplified outline (TO-220AB) and symbols. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505D) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.3 see Fig.3 Tmb ≤ 25 °C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS − − − − − − − − 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 − V V V V A A A W µs UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.67 UNIT K/W 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Ab...