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BU4540 Datasheet

Part Number BU4540
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4540 DatasheetBU4540 Datasheet (PDF)

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM .

  BU4540   BU4540






Part Number BU4540AW
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4540 DatasheetBU4540AW Datasheet (PDF)

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM .

  BU4540   BU4540







Part Number BU4540AL
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4540 DatasheetBU4540AL Datasheet (PDF)

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM .

  BU4540   BU4540







Silicon Diffused Power Transistor

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4540AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 16 8 t.b.f t.b.f MAX. 1500 800 25 40 125 3.0 t.b.f t.b.f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 16.0 A; IB = 4 A f = 32kHz f = 110kHz ICsat = 16 A; f = 32kHz ICsat = 8 A; f = 110kHz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Total power dissipation Storage temperat.


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