Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
GENERAL DESCRIPTION
Enhanc...
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-
voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 10 8.0 t.b.f t.b.f MAX. 1500 800 16 40 45 3.0 t.b.f t.b.f UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 10 A; IB = 2.5 A f = 32kHz f = 90kHz ICsat = 10.0 A; f = 32kHz ICsat = 8.0 A; f = 90kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Stora...