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BU4525DW Datasheet

Part Number BU4525DW
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4525DW DatasheetBU4525DW Datasheet (PDF)

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERE.

  BU4525DW   BU4525DW






Part Number BU4525DW
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU4525DW DatasheetBU4525DW Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEB.

  BU4525DW   BU4525DW







Silicon Diffused Power Transistor

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 14 30 125 3.0 2.2 0.55 t.b.f UNIT V V A A W V A A V µs µs Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A f = 16 kHz f = 70 kHz IF = 9.0 A ICsat = 9.0 A;f = 16 kHz f = 70 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b Rbe 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse .


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