Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
GENERAL DESCRIPTION
Enhanc...
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-
voltage, high-speed switching npn transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Diode forward
voltage Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 12 30 45 3.0 2.2 0.55 t.b.f UNIT V V A A W V A A V µs µs
Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A f = 16 kHz f = 70 kHz IF = 9.0 A ICsat = 9.0 A;f = 16 kHz f = 70 kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak va...