BU4525AX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4525AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current- Continuous Collector Current-Peak IB Base Current- Continuous www.DataSheet4U.com B w ww s c s .i 800 V 7.5 V 12 A 30 A 8 A 12 A 45 W ℃ ℃ 150 n c . i m e IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 1.06 1.0 2.0 0.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; ...