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BU408D
NPN Transistor
Description
isc Silicon NPN Power Transistor DESCRIPTION ·High
Voltage
: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation
Voltage
- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIM...
INCHANGE
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