SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datas...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High
voltage ·Fast switching speed ·Low saturation
voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BU406D BU407D
Absolut maximum ratings (Ta=25 )
SYMBOL VCBO PARAMETER Collector-base
voltage BU406D BU407D BU406D BU407D CONDITIONS Open emitter VALUE 400 330 200 150 6 7 10 4 TC=25 60 150 -65~150 UNIT V
VCEO VEBO IC ICM IB Ptot Tj Tstg
Collector-emitter
voltage Emitter-base
voltage Collector current (DC) Collector current-Peak Base current Total power dissipation
Open base Open collector
V V A A A W
Maximum operating junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
www.datasheet4u.com
BU406D BU407D
SYMBOL
MIN
TYP.
MAX
UNIT
BU406D VCEO(SUS) Collector-emitter sustaining
voltage BU407D IC=100mA ; IB=0
200 V 150
VCEsat VBEsat
Collector-emitter saturation
voltage
IC=5A ;IB=0.65A IC=5A ;IB=0.65A VCE=400V; VBE=-1.5V
1.0
V
Base-emitter saturation
voltage
1.3
V
BU406D ICEV Collector cut-off current BU407D
15 VCE=330V; VBE=-1.5V VEB=6.0V; IC=0 IC=2...