BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal deflection out...
BU406, BU407
NPN Power Transistors
These devices are high
voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s.
Features
High
Voltage Fast Switching Speed Low Saturation
Voltage These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS Rating
Collector−Emitter
Voltage
Symbol
BU406 VCEO BU407
Value
200 150
Unit Vdc
Collector−Emitter
Voltage
BU406 VCEV 400 Vdc
BU407
330
Collector−Base
Voltage
BU406 VCBO 400 Vdc
BU407
330
Emitter−Base
Voltage
Collector Current − Continuous − Peak Repetitive
VEBO 6 Vdc
IC 7 Adc 10
Collector Current − Peak (10 ms) Base Current Total Device Dissipation @ TC = 25_C
Derate above 25°C
ICM 15 Adc IB 4 Adc PD 60 W
0.48 W/_C
Operating and Storage Junction Temperature Storage
TJ, Tstg −65 to 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes1/8″ from Case for 5 Seconds
Symbol RqJC RqJA TL
Max 2.08 70 260
Unit _C/W _C/W
_C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
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