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BU407

ON Semiconductor

NPN Power Transistors

BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection out...


ON Semiconductor

BU407

File Download Download BU407 Datasheet


Description
BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features High Voltage Fast Switching Speed Low Saturation Voltage These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol BU406 VCEO BU407 Value 200 150 Unit Vdc Collector−Emitter Voltage BU406 VCEV 400 Vdc BU407 330 Collector−Base Voltage BU406 VCBO 400 Vdc BU407 330 Emitter−Base Voltage Collector Current − Continuous − Peak Repetitive VEBO 6 Vdc IC 7 Adc 10 Collector Current − Peak (10 ms) Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C ICM 15 Adc IB 4 Adc PD 60 W 0.48 W/_C Operating and Storage Junction Temperature Storage TJ, Tstg −65 to 150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes1/8″ from Case for 5 Seconds Symbol RqJC RqJA TL Max 2.08 70 260 Unit _C/W _C/W _C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 Nove...




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