Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2730AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak v.
Silicon Diffused Power Transistor
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2730AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 9 3.5 MAX. 1700 825 16 40 125 5.0 4.5 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 9 A; IB = 1.8 A f = 32 kHz ICsat = 9 A; f = 32 kHz
PINNING - SOT430
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
heat collector sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1700 825 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Tmb ≤ 25 ˚C
THERMAL RES.