INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2727DX
www.datasheet4u.com
DESC...
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2727DX
www.datasheet4u.com
DESCRIPTION ·High Switching Speed ·High
Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCES
Collector- Emitter
Voltage(VBE= 0)
1700
V
VCEO
Collector-Emitter
Voltage
825
V
VEBO
Emitter-Base
Voltage
7.5
V
IC ICM
Collector Current- Continuous
12
A
Collector Current-Peak
30
A
IB
B
Base Current- Continuous
12
A
IBM
Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature
20
A
PC
45
W ℃ ℃
TJ
150
Tstg
Storage Temperature Range
-65~150
SYMBOL
PARAMETER Thermal Resistance,Junction to Case
MAX 2.8
UNIT ℃/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
www.datasheet4u.com
BU2727DX
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)EBO
Emitter-Base Breakdown
Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation
Voltage
IC= 5A; IB= 0.91A
B
1.0
V
VBE(sat)
Base-Emitter Saturation
Voltage
IC= 5A; IB= 0.91A
B
1.0 1.0 2.0 22
V
ICES
Collector Cutoff Current
VCE= 1700V; VBE= 0 VCE= 1700V; VBE= 0; TC=125℃ IC= 1A; VCE= 5V
mA
hFE-1
DC Current Gain
hFE-2
DC Current Gain
IC= 5A; VCE= 1V
5.5
11
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