DatasheetsPDF.com

BU2727AX Datasheet

Part Number BU2727AX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2727AX DatasheetBU2727AX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Col.

  BU2727AX   BU2727AX






Part Number BU2727AW
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU2727AX DatasheetBU2727AW Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727AW www.datasheet4u.com DESCRIPTION ·With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltag.

  BU2727AX   BU2727AX







Part Number BU2727AW
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2727AX DatasheetBU2727AW Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base).

  BU2727AX   BU2727AX







Part Number BU2727AF
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU2727AX DatasheetBU2727AF Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC.

  BU2727AX   BU2727AX







Part Number BU2727AF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2727AX DatasheetBU2727AF Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Col.

  BU2727AX   BU2727AX







Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.0 2.5 MAX. 1700 825 12 30 45 1.0 3.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.0 A; IB = 0.91 A f = 64 kHz ICsat = 5.0 A; f = 64kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 12 30 12 20 200 9 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period.


2005-04-17 : 2SK1792    7611    7611D2    74LS192    7425    LA7830    IDT74FCT827B    IDT74FCT827BT    IDT74FCT827C    IDT74FCT827CT   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)