Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
GENERAL DESCRIPTION
New g...
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
GENERAL DESCRIPTION
New generation, high-
voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 125 5.0 2.0 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICM = 6.0 A; IB(end) = 0.55 A
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V V A A A A mA A W ...