Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DF
GENERAL DESCRIPTION
New gene...
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DF
GENERAL DESCRIPTION
New generation, high-
voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Diode forward
voltage Fall time CONDITIONS VBE = 0 V TYP. 6 0.12 MAX. 1500 800 10 25 45 5.0 2.2 0.25 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A f = 64 kHz IF = 6.0 A ICsat = 6.0 A; f = 64 kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature ...