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BU2508A Datasheet

Part Number BU2508A
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2508A DatasheetBU2508A Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat.

  BU2508A   BU2508A






Part Number BU2508A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BU2508A DatasheetBU2508A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508A www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Col.

  BU2508A   BU2508A







Part Number BU2508A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU2508A DatasheetBU2508A Datasheet (PDF)

isc Silicon NPN Power Transistor BU2508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.

  BU2508A   BU2508A







Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.4 MAX. 1500 700 8 15 125 1.0 5.0 0.6 UNIT V V A A W V V A µs Tmb ≤ 25 ˚C IC = 4.5 A; IB = 1.29 A IC = 4.5 A; IB = 1.1 A ICM = 4.5 A; IB(end) = 1.1 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipati.


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