isc Silicon NPN Power Transistor
BU2507AF
DESCRIPTION ·High Switching Speed ·High Voltage ·Minimum Lot-to-Lot variatio...
isc Silicon NPN Power Transistor
BU2507AF
DESCRIPTION ·High Switching Speed ·High
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM Collector-Emitter
Voltage VBE=0
1500
V
VCEO
Collector-Emitter
Voltage
700
V
VEBO
Emitter-Base
Voltage
7.5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
6
A
45
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.8 K/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA ;IB= 0,L= 25mH
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A ;IB= 0.8A
VBE(sat) Base-Emitter Saturation
Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A ;IB= 0.8A
VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃
VEB= 7.5V; IC= 0
hFE-1
DC Current Gain
IC= 100mA; VCE= 5V
hFE-2
DC Current Gain
I...