SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datashee...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datasheet4u.com ·Built-in damper diode ·High
voltage capability APPLICATIONS ·For use in horizontal deflection output stages for color TV receives.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
BU208D
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 150 175 -65~175 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com
BU208D
SYMBOL
MAX
UNIT
VCEO(SUS
Collector-emitter sustaining
voltage
IC=0.1A; IB=0;
700
V
VCEsat
Collector-emitter saturation
voltage
IC=4.5 A;IB=2 A
1.0
V
VBEsat
Base-emitter saturation
voltage
IC=4.5 A;IB=2 A VCE=1500V;VBE=0 Tj=125 VEB=5V; IC=0
1.3 1.0 2.0 300
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
VF
Diode forward
voltage
IF=4A
2.0
V
fT
Transition frequency
IC=0.1A ;...