HITFET®BTS 933
Smart Lowside Power Switch
Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Ov...
HITFET®BTS 933
Smart Lowside Power Switch
Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Over
voltage protection Current limitation Maximum current adjustable with external resistor Current sense Status feedback with external input resistor Analog driving possible
Product Summary Drain source
voltage On-state resistance Current limit Nominal load current Clamping energy
VDS R DS(on) I D(lim) I D(ISO) EAS
60 50 3 7
V mΩ A A
2000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions.
V bb
General Description
+
LOAD NC Drain dv/dt limitation Current limitation Over
voltage protection M
2
3
1
IN
4
CC Overtemperature protection
ESD R CC
Overload protection
Short circuit circuit Short protection protection Source 5
HITFET
®
Semiconductor Group
Page 1
02.12.1998
BTS 933
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source
voltage Drain source
voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ V IN ≤ 10V
1)
Symbol
Value 60 15 50
Unit V
VDS VDS(SC)
I IN
no limit | IIN | ≤ 2
mA
VIN < -0.2V or VIN > 10V
Operating tem...