Smart Low Side Power Switch Power HITFET BTS 3142D
Features · Logic Level Input · Input Protection (ESD) · Thermal shut...
Smart Low Side Power Switch Power HITFET BTS 3142D
Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown Green product (RoHS compliant) · Overload protection · Short circuit protection · Over
voltage protection · Current limitation · Analog driving possible
Product Summary
Drain source
voltage VDS
42 V
On-state resistance RDS(on) 28 mΩ
Nominal load current Clamping energy
ID(Nom) EAS
4.6 A 3.5 J
P / PG-TO252-3-11
Application
All kinds of resistive, inductive and capacitive loads in switching or linear applications
μC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions.
Vbb
HITFET ®
In Pin 1
Gate-Driving Unit
Current Limitation
Over
voltageProtection
ESD
Overload Protection
Overtemperature Protection
Short circuit Protection
Drain Pin 2 and 4 (TAB)
Source
Pin 3
M
Datasheet
1 Rev. 1.4, 2013-03-07
Smart Low Side Power Switch Power HITFET BTS 3142D
Maximum Ratings at Tj = 25 °C, unless otherwise specified 1)
Parameter
Symbol
Drain source
voltage Drain source
voltage for short circuit protection Tj = -40 ... +150 °C
VDS VDS(SC)
Continuous input current -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V
IIN
Operating temperature
Storage temperature Power dissipation 4) TC = 85 °C 6cm2 cooling area , TA = 85 °C
Tj Tstg Ptot
Unclamped single pulse induct...