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BTS112A Datasheet

Part Number BTS112A
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet BTS112A DatasheetBTS112A Datasheet (PDF)

TEMPFET® BTS 112A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current,.

  BTS112A   BTS112A






Part Number BTS112A
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet BTS112A DatasheetBTS112A Datasheet (PDF)

TEMPFET® BTS 112 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current,.

  BTS112A   BTS112A







TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

TEMPFET® BTS 112A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.5 48 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 112A Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1.0 mA Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 7.5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = .


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