TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
TEMPFET®
BTS 110
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The dra...
TEMPFET®
BTS 110
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
3 1 2
Pin
1 G
2 D
3 S
Type BTS 110
VDS
100 V
ID
10 A
RDS(on)
0.2 Ω
Package TO-220AB
Ordering Code C67078-A5008-A2
Maximum Ratings Parameter Drain-source
voltage Drain-gate
voltage, RGS = 20 kΩ Gate-source
voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 10 1.75 40 37 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
Semiconductor Group
1
04.97
BTS 110
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown
voltage VGS = 0, ID = 1 mA Gate threshold
voltage VGS = VDS, ID = 1 mA Zero gate
voltage drain current VGS = 0 V, VDS = 100 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 5 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 5 A In...