BTD1857AD3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 BTD1857AD3 Description High BVCEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol BTD1857AD3 Outline TO-126ML B：Base C：Collector E：Emitter E E CC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 1 20 150 -55~+150 Unit V V V A A W W °C °C BTD1857AD3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 82 30 Typ. 140 27 Max. 1 1 0.6 1.5 320 Unit V V V µA µA V V MHz pF Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range P 82~180 Q 120~200 R 180~320 BTD1857AD3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Tj=125℃ Spec. No. : C85...