CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805J3
BVCEO IC RCESAT
Spec. No. : C820J3 Iss...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805J3
BVCEO IC RCESAT
Spec. No. : C820J3 Issued Date : 2004.12.19 Revised Date :2010.12.08 Page No. : 1/ 6
60V 5A 100mΩ
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation
voltage.
Features
Very low collector-to-emitter saturation
voltage Fast switching speed High current gain characteristic Large current capability RoHS compliant package
Applications
CCFL drivers
Voltage regulators Relay drivers High efficiency low
voltage switching applications
Symbol
BTD1805J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
BTD1805J3
B CE
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C820J3 Issued Date : 2004.12.19 Revised Date :2010.12.08 Page No. : 2/ 6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage (IE=0) Collector-Emitter
Voltage (IB=0) Emitter-Base
Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PD
PD
RθJA RθJC Tj Tstg
Limits
150 60 7 5 10 (Note 1) 2 1
15
125 8.33 150 -55~+150
Unit V V V
A
A
W
°C/W °C/W
°C °C
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
Characteristics...