CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820D3 Issued Date : 2005.03.29 Revise...
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 1/ 4
BTD1805D3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation
voltage.
Features
Very low collector-to-emitter saturation
voltage Fast switching speed High current gain characteristic Large current capability Pb-free package
Applications
CCFL drivers
Voltage regulators Relay drivers High efficiency low
voltage switching applications
Symbol
BTD1805D3
Outline
TO-126ML
B:Base C:Collector E:Emitter
E C B
BTD1805D3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage (IE=0) Collector-Emitter
Voltage (IB=0) Emitter-Base
Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg
Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 2/ 4
Limits 150 60 7 5 10 (Note 1) 2 1 20 125 8.33 150 -55~+150
Unit V V V A A W °C/W °C/W °C °C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCBO *BVCEO BVEBO I...