BTD1768N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 1/7 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, VCEO=80V (min.) High collector current, IC(max)=1A (DC) Pb-free lead plating and halogen-free package Symbol BTD1768N3 Outline SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTD1768N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1768N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2014.07.01 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj ; Tstg Limits 100 80 5 1 2 (Note) 225 556 -55~+150 Unit V V V A A mW °C/W °C Characteristics (Ta=25...