BTC2412N3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2412N3 Description The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Low Cob. Typ. Cob=2.0pF Complementary to BTA1037N3 . Equivalent Circuit BTC2412N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 50 7 150 225 150 -55~+150 Unit V V V mA mW °C °C BTC2412N3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 120 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 820 3.5 Unit V V V uA uA V MHz pF Test Conditions IC=100uA IC=1mA IE=50uA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range Q 120-270 R 180-390 S 270-560 T 410-820 Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=6V Saturation Voltage-(mV) Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 ...