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BTB24-400B

ST Microelectronics

STANDARD TRIACS

® BTB24 B STANDARD TRIACS . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION The...


ST Microelectronics

BTB24-400B

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Description
® BTB24 B STANDARD TRIACS . . FEATURES HIGH SURGE CURRENT CAPABILITY COMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION The BTB24 B triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 2 . IGT tr ≤ 100ns Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Tc = 90 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 100 Hz Value 25 260 250 312 50 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C °C Unit A A A1 A2 G TO220AB (Plastic) I2t dI/dt Tstg Tj Tl Symbol Parameter 400 BTB24-... B 600 600 700 700 800 800 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V October 1998 - Ed: 2A 1/4 BTB24 B THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 1.5 1.1 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS...




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