INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTB04 T/D/S/A
FEATURES ·With TO-220AB non insulated packag...
INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTB04 T/D/S/A
FEATURES ·With TO-220AB non insulated package ·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a)
RMS on-state current (full sine wave)Tj=95℃ Non-repetitive peak on-state current tp=10ms Operating junction temperature Storage temperature Thermal resistance, junction to case Thermal resistance, junction to ambient
MIN UNIT
4A 40 A 110 ℃ -45~150 ℃ 3.2 ℃/W 60 ℃/W
SYMBOL
PARAMETER
VDRM VRRM
Repetitive peak off-state
voltage Repetitive peak reverse
voltage
400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT 400 600 700 V 400 600 700 V
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM IDRM
IGT
Repetitive peak reverse current Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110℃
VD=VDRM,
VD=VDRM, Tj=110℃
Gate trigger current
Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω
T 5
Ⅳ5
IH Holding current
IGT= 0.1A, Gate Open 15
VGT Gate trigger
voltage all quadrant VD=12V; RL= 30Ω
VTM On-state
voltage
IT= 5A
MAX
0.01 0.5 0.01 0.5 DS
5 10
10 10
15 25
1.5
1.65
UNIT
mA
mA A 10 mA 25 25 mA
V V
isc website:www.iscsemi.cn
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