isc Triacs
INCHANGE Semiconductor
BTA41-600
FEATURES ·With TOP3 insulated package ·Suitables for general purpose where...
isc Triacs
INCHANGE Semiconductor
BTA41-600
FEATURES ·With TOP3 insulated package ·Suitables for general purpose where high surge current capability is required.
Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state
voltage
600
V
VRRM Repetitive peak reverse
voltage
600
V
IT(RMS) RMS on-state current (full sine wave)Tj=80℃
41
A
ITSM Non-repetitive peak on-state current tp=20ms
410
A
Tj
Operating junction temperature
125
℃
Tstg Storage temperature
-40~150 ℃
PG(AV) Average gate power dissipation(Tj=125℃)
1
W
Rth(j-c) Thermal resistance, junction to case
0.9 ℃/W
Rth(j-a) Thermal resistance, junction to ambient
50
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; RL= 100Ω Ⅲ
Ⅳ
IH
Holding current
IGT= 0.5A, Gate Open
VGT Gate trigger
voltage all quadrant VD=12V; RL= 100Ω
VTM On-state
voltage
ITM= 60A; tp= 380μs
MAX
0.005 5.0
0.005 5.0
50
UNIT
mA mA
50 mA
50
100
80 mA
1.3
V
1.55 V
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isc Triacs
INCHANGE Semiconductor
BTA41-600
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