Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass pass...
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA225B series C
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225BRepetitive peak off-state
voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500C 500 25 180 600C 600 25 180 800C 800 25 180 V A A
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM IT(RMS) ITSM Repetitive peak off-state
voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate
voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
190 209 180 100 2...