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BTA225-500C Datasheet

Part Number BTA225-500C
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA225-500C DatasheetBTA225-500C Datasheet (PDF)

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur loads. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA225 series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225Repetitive peak off-s.

  BTA225-500C   BTA225-500C






Part Number BTA225-500B
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA225-500C DatasheetBTA225-500B Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA225B series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA22.

  BTA225-500C   BTA225-500C







Three quadrant triacs high commutation

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur loads. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA225 series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500C 500 25 190 600C 600 25 190 800C 800 25 190 V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. -500 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs 6001 MAX. -600 6001 25 -800 800 V A UNIT I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 190 209 180 100 2 5 5 0.5 150 125 A A A2s.


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