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BTA216X-600C Datasheet

Part Number BTA216X-600C
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA216X-600C DatasheetBTA216X-600C Datasheet (PDF)

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 16 .

  BTA216X-600C   BTA216X-600C






Part Number BTA216X-600F
Manufacturers WeEn
Logo WeEn
Description Three quadrant triac
Datasheet BTA216X-600C DatasheetBTA216X-600F Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series D, E and F Three quadrant triacs guaranteed commutation Product specification September 2018 WeEn Semiconductors Three quadrant triacs guaranteed commutation Product specification BTA216X series D, E and F GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performan.

  BTA216X-600C   BTA216X-600C







Part Number BTA216X-600E
Manufacturers WeEn
Logo WeEn
Description Three quadrant triac
Datasheet BTA216X-600C DatasheetBTA216X-600E Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series D, E and F Three quadrant triacs guaranteed commutation Product specification September 2018 WeEn Semiconductors Three quadrant triacs guaranteed commutation Product specification BTA216X series D, E and F GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performan.

  BTA216X-600C   BTA216X-600C







Part Number BTA216X-600D
Manufacturers WeEn
Logo WeEn
Description Three quadrant triac
Datasheet BTA216X-600C DatasheetBTA216X-600D Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BTA216X series D, E and F Three quadrant triacs guaranteed commutation Product specification September 2018 WeEn Semiconductors Three quadrant triacs guaranteed commutation Product specification BTA216X series D, E and F GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performan.

  BTA216X-600C   BTA216X-600C







Part Number BTA216X-600B
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA216X-600C DatasheetBTA216X-600B Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600B .

  BTA216X-600C   BTA216X-600C







Three quadrant triacs high commutation

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 16 140 800C 800 16 140 V A A BTA216X- 500C Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.5 150 125 A A A2s A/µs .


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