Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass pass...
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA212B series C
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 12 95 800C 800 12 95 V A A BTA212B- 500C Repetitive peak off-state 500
voltages RMS on-state current 12 Non-repetitive peak on-state 95 current
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state
voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate
voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
95 105 45 100 2 5 5...