BTA212B-800B

isc Thyristors INCHANGE Semiconductor BTA212B-800B DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current @Tc=99℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MIN UNIT 800 V 800 V 12 A 95 104 A 0.5 W -40~125 ℃ -40~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA212B-800B ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=100℃ 0.01 0.5 mA VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=17A,tP=380μs Ⅰ VD =12V;IT=0.1A Ⅱ Ⅲ VD =12V;IT=0.1A 1.6 V 50 50 mA 50 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informat...